Back to industrial propertyInfrared photodetection is of great interest for a wide range of applications, such as night vision, automobile autopilot and surveillance, etc. [1‑5]. Currently, infrared photodetectors mainly rely on materials with epitaxial growth method, making them exceptionally high cost. In the past decade, colloidal quantum dots have emerged as an important low-cost substitutes forinfrared photodetectors, thanks to their solution-processibility, size-tuneable spectral sensitivity and compatibility with silicon electronics integration.The present invention generally relates to a photodetector device comprising an environmentally friendly light-active absorbing structure with silver chalcogenide quantum dots, and providing a reduced dark current and improved photo-detectivity.
