Amorphous Boron Nitride Compound, Boron Nitride Film Including The Same, and Electronic Device Including The Boron Nitride Film

27/07/2022: Provisional application US63/392,561 Title initial application: Mechanical property and thermal stability improving method using SAMEIntegrated circuits of various electronic apparatuses including field effect transistors, memory devices, display apparatuses, image sensors, and the like may be manufactured by combining and connecting semiconductors, conductors, and insulators. For example, integrated circuits of various electronic apparatuses may be manufactured by forming a plurality of unit elements on a substrate and then stacking an interlayer insulating film and lines thereon.The present disclosure relates to an amorphous boron nitride compound, a boron nitride film including the same, and an electronic device including the boron nitride film.An amorphous boron nitride compound may include a boron nitride compound, where the boron nitride compound may be amorphous and may be doped with carbon or hydrogen. In the boron nitride compound, a total content of the carbon or the hydrogen may be in a range of about 0.1 at % to about 35 at % of a total atomic content.